Highly Linear Low pass Gm-C filter with self-aliasing transconductor for digital TV tuner
To improve the linearity of the transconductor in digital TV tuner application, a
new technique of multiple gated transistors in self-biasing basis is presented . The
proposed design decreases the bill-of-material (BOM) and offers less complexity of
the structure. In addition, the proposed transconductor with utilizing by third-order
Chebyshev introduces low-pass filter with low power consumption and cutoff frequency
of 50-200 MHz. The hybrid tracking low-pass filter is designed to overcome the issue
of local oscillator harmonic-mixing for Advanced Televi-sion System Committee terrestrial
digital TV tuner integrated circuit. The proposed operational transconductor
amplifier (OTA) is designed and implemented in 90 nm CMOS technology. The simulation
result with two-tone test at 100 MHz center frequency proves the proposed
OTA has 5 dBm Input-referred Third-Order Intercept Point (IIP3) in compare with
a single-gate OTA in the third-order Chebyshev filter. The proposed OTA achieves
maximum noise figure (NF) of 13 dB and maximum IIP3 of approximately 21.7 dBm
at 100 MHz, whereas consuming 18 mA with 1.2 V supply voltage and it shows great
improvement compare to recent research works (Darvishi, Van der Zee, Klumperink,
& Nauta (2012); Li, Huang, & Hong (2010); Mobarak, Onabajo, Silva-Martinez, &
Sanchez-Sinencio (2010))
To improve the linearity of the transconductor in digital TV tuner application, a
new technique of multiple gated transistors in self-biasing basis is presented . The
proposed design decreases the bill-of-material (BOM) and offers less complexity of
the structure. In addition, the proposed transconductor with utilizing by third-order
Chebyshev introduces low-pass filter with low power consumption and cutoff frequency
of 50-200 MHz. The hybrid tracking low-pass filter is designed to overcome the issue
of local oscillator harmonic-mixing for Advanced Televi-sion System Committee terrestrial
digital TV tuner integrated circuit. The proposed operational transconductor
amplifier (OTA) is designed and implemented in 90 nm CMOS technology. The simulation
result with two-tone test at 100 MHz center frequency proves the proposed
OTA has 5 dBm Input-referred Third-Order Intercept Point (IIP3) in compare with
a single-gate OTA in the third-order Chebyshev filter. The proposed OTA achieves
maximum noise figure (NF) of 13 dB and maximum IIP3 of approximately 21.7 dBm
at 100 MHz, whereas consuming 18 mA with 1.2 V supply voltage and it shows great
improvement compare to recent research works (Darvishi, Van der Zee, Klumperink,
& Nauta (2012); Li, Huang, & Hong (2010); Mobarak, Onabajo, Silva-Martinez, &
Sanchez-Sinencio (2010))
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